Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction

This work explores the high-temperature carrier electrical transport behavior of n-ZnO nanowires (NWs)/p-diamond heterojunctions. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than the larger diameter of n-ZnO nanorods (NRs)/p-BDD heterojunction. The temperature-dependent carrier transport mechanisms, recombination-tunneling and space-charge-limited current conduction in n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions at different bias voltages are discussed. The proposed equilibrium energy band diagrams are used to analyse the carrier injection process mechanism for ZnO NWs/BDD. The ZnO NWs/BDD heterojunction presents improved I-V characteristics and relatively high performance for the electrical transport properties. This research further expands and optimizes the application of diamond-based devices.