Yao, Yu and Sang, Dandan and Zou, Liangrui and Wang, Xueting and Wang, Qinglin (2022) Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction. In: Recent Trends in Chemical and Material Sciences Vol. 7. B P International, pp. 42-51. ISBN 978-93-5547-223-6
Full text not available from this repository.Abstract
This work explores the high-temperature carrier electrical transport behavior of n-ZnO nanowires (NWs)/p-diamond heterojunctions. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than the larger diameter of n-ZnO nanorods (NRs)/p-BDD heterojunction. The temperature-dependent carrier transport mechanisms, recombination-tunneling and space-charge-limited current conduction in n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions at different bias voltages are discussed. The proposed equilibrium energy band diagrams are used to analyse the carrier injection process mechanism for ZnO NWs/BDD. The ZnO NWs/BDD heterojunction presents improved I-V characteristics and relatively high performance for the electrical transport properties. This research further expands and optimizes the application of diamond-based devices.
Item Type: | Book Section |
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Subjects: | Open Research Librarians > Materials Science |
Depositing User: | Unnamed user with email support@open.researchlibrarians.com |
Date Deposited: | 12 Oct 2023 06:27 |
Last Modified: | 12 Oct 2023 06:27 |
URI: | http://stm.e4journal.com/id/eprint/1718 |